| PART |
Description |
Maker |
| 1N5651/1 1N5649A 1N5648 1N5655A 1N5658 1N5646 1N56 |
Diode TVS Single Uni-Dir 45.4V 1.5KW 2-Pin DO-13
Diode TVS Single Uni-Dir 40.2V 1.5KW 2-Pin DO-13
Diode TVS Single Uni-Dir 38.1V 1.5KW 2-Pin DO-13
Diode TVS Single Uni-Dir 34.8V 1.5KW 2-Pin DO-13
Diode TVS Single Uni-Dir 70.1V 1.5KW 2-Pin DO-13
Diode TVS Single Uni-Dir 89.2V 1.5KW 2-Pin DO-13
Diode TVS Single Uni-Dir 29.1V 1.5KW 2-Pin DO-13
Diode TVS Single Uni-Dir 121V 1.5KW 2-Pin DO-13
|
New Jersey Semiconductor
|
| M39832-B15WNE1T M39832-B15WNE6T M39832-B12WNE1T M3 |
TVS UNI-DIR 51V 600W DO-15
TVS UNI-DIR 30V 600W DO-15
RECTIFIER, BRIDGE, 600V, 6A, PB-6
TVS BI-DIR 30V 600W DO-15 单芯兆x812KB的x16闪存56千位并行EEPROM存储
|
意法半导
STMicroelectronics N.V.
|
| 1N6135 1N6135A 1N6137 1N6137A |
Diode TVS Single Bi-Dir 121.6V 500W 2-Pin Case G-95
Diode TVS Single Bi-Dir 152V 500W 2-Pin Case G-95
|
New Jersey Semiconductor
|
| Z85230-20VSC Z85230-16VSC Z80230-10PSC Z85230-16PS |
FUSE - PTC 0.5/1A SMT 1812
DIODE TVS 7.5V 1.5KW BI-DIR
Communications Controller 通信控制
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:342V; Breakdown Voltage, Vbr:380V; Package/Case:DO-201; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Current IPP @ 10x1000uS:2.8A RoHS Compliant: Yes 通信控制
DIODE TVS 100V 1500W 5% BI AXL 通信控制
TVS Diode; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Microsemi, Corp.
|
| NX8563LA-AZ NX8563LA509-CD NX8563LAS509-CD NX8563L |
; Leaded Process Compatible:Yes
TVS UNI-DIR 68V 1500W DO-201
TVS BI-DIR 68V 1500W DO-201
3A 100V Schottky Rectifier; Package: Axial Lead 9.50x5.30mm, 25.4x1.20mm Pkg, Lead len/dia; No of Pins: 2; Container: Bulk; Qty per Container: 500
CONVERTER DC-DC 1W 5V/14V SGL
CONVERTER DC-DC 1W 5V/12V SGL
CONVERTER DC-DC 1W 7V/7V DUAL
DIODE ZENER SINGLE 200mW 5.6Vz 20mA-Izt 0.02504 0.5uA-Ir 2.5 SOD-323 3K/REEL
NECs DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
MILITARY BATTERY RoHS Compliant: NA 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
DIODE ZENER SINGLE 500mW 5.6Vz 20mA-Izt 0.02504 0.5uA-Ir 2.5 SOD-123 3K/REEL 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
CONVERTER DC-DC 1W 5V/5V DUAL 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
NECs DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块2.5 GB /秒，110公里240公里REACH的DWDM城域和有线电视领域的应用
|
California Eastern Laboratories, Inc.
|
| SD05 SD05-7 |
UNI-DIRECTIONAL SURFACE MOUNT TVS
350 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
Diodes Incorporated
|
| STK16N10L |
DIODE TVS 33V 500W BI-DIR
|
|
| VGFM24A-FN5 |
90W SURFACE MOUNT UNI-DIRECTIONAL TVS DIODE-24V
|
WILLAS ELECTRONIC CORP
|
| TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五（公报）最大|的DO - 215AA
|
ITT, Corp.
|
| P6KE7.5CA-T |
TVS BI-DIR 7.5V 600W DO-15
|
DIODES INC
|
